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Almudever, C GAuthor

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February 7, 2025
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Proceedings Paper
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memFET: from Gate Dielectric Breakdown to System Reconfigurability

Publicated to: IEEE International Reliability Physics Symposium Proceedings. - 2013-01-01 (), DOI:

Authors:

Martin-Martinez, J; Crespo-Yepes, A; Rodriguez, R; Nafria, M; Almudever, C G; Rubio, A
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Affiliations

Univ Autonoma Barcelona, Dept Elect Engn, Edifici Q, E-08193 Barcelona, Spain - Author
UPC, Dept Engn Elect, Barcelona 08034, Spain - Author

Abstract

In this paper, a new device concept, called hereafter memFET, is presented. The memFET exploits in MOSFETs the reversibility property of the dielectric breakdown (BD) in some materials, so that the potential device functionality is enlarged when compared to MIS/MIM structures. The memFET can be used to implement logic functions and memory blocks into a crossbar structure, allowing the dynamic logic configuration of the crossbar, opening paths to new adaptive computing hardware and fault-tolerant systems.
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Keywords

Adaptive computinCmosCrossbarDielectric breakdownNon-volatile memoriesResistive switching

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal IEEE International Reliability Physics Symposium Proceedings due to its progression and the good impact it has achieved in recent years, according to the agency Scopus (SJR), it has become a reference in its field. In the year of publication of the work, 2013, it was in position , thus managing to position itself as a Q1 (Primer Cuartil), in the category Engineering (Miscellaneous).

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Awards linked to the item

This work has been partially supported by the Spanish MINECO (TEC2010-16126, TEC2010-10021-E, and TEC2008-01856 with additional participation of FEDER founds) and the Generalitat de Catalunya (2009SGR-783).
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